InSight AFP

Process control requires accuracy, precision and long-term reproducibility; CMP process control requires all of these while maintaining sensitivity to the sub nanometer topography of modern polishing technologies for front, mid, back and far-back end-of-line. The InSight AFP's picometer sensitivity ensures detection of post polish residual topography. With 2 picometer, long term, probe-to-probe repeatability and reproducibility, this is data to trust for process control.

Etch depth metrology for process control, a simple, critical, ask; DTMode is the answer. DTMode is a Bruker proprietary adaptive scan mode, proven to have the lowest Total Measurement Uncertainty (TMU) of any AFM for depth metrology. With a < 10 s MAM time, DTMode enables the depth metrology required for HVM Etch process control.

Measure twice…. cut once. Metrology as part of process development is more critical than ever. Short loops, process variants and complex DOEs require metrology systems to be highly flexible and adaptable while maintaining the critical accuracy and precision requirements. The InSight AFP’s simple, intuitive recipe interface enables metrology for process development through an XML/CAD interface that enables recipe writing in < 5 min.

Metrology for CMP process development requires speed, accuracy, precision and all while permitting the flexibility required for robust recipes. The extended range, super-flat scanner has less than 1nm out of plan motion over the entire 105 μm scan range ensuring the highest accuracy metrology of the lowest topographies. Combining the extended range, 105 μm scanner with the Large Area Scanning mode enables metrology for CMP process development from 10s of nm to 300 mm.

The transition to EUV lithography has brought with it a number of new metrology metrics that must be monitored. One of these new metrics is Top Line Roughness (LTR). LTR does correlate with defectivity and yield results for the two resists discussed here. The resist with lower LTR (by 9% on average) develops significantly less line break defects and shows much better yield (Resist B). Therefore, LTR analyses post development may be used for early screenings of new resist formulations and help to forecast pitch- and dose-dependent performance as well as allow for yield predictions. The InSight AFP’s TrueSense™ mode provides the highest resolution AFM image for non-destructive Top Line Roughness EUV process monitoring

f电子束抵抗收缩仍然是一个问题or EUV resists. Characterizing and understanding how the resist profile changes with ebeam exposure is critical for developing the best models for EUV process development. The InSight AFP’s TrueSense™ mode is the solution to this challenge. TrueSense™ relies on instantaneous feedback enabling pico Newton force control ensuring the highest accuracy, non-destructive surface profiling. Measuring those areas that are exposed and areas that are not exposed characterizes the resist profile change. This additional data is then fed into the metrology kit to generate better models for faster process development. This requires that the AFP and the SEM are measuring the same exact features. This is enabled by sharing recipes through the XML interface and sub 250nm raw image placement accuracy.