AFM模式

Datacube模式

Multidimensional nanoscale information at every pixel

纳米电特性的完整解决方案

Datacube模式扩展了功能,例如Peakforce TunaPeakforce KPFM, by enabling the acquisition of multidimensional data cubes. For materials scientists and engineers, this breaks long-standing efficiency and characterization barriers. These new capabilities provide simultaneous capture of nanometer-scale electrical and mechanical characteristics in high-density data cubes, previously impossible to attain in a single measurement.

相关的多维电谱

Dimension XR的DataCube模式在每个像素上提供多维纳米级信息,同时以单个测量和机械特性捕获。

Datacube模式使用FastForce量要在每个像素中执行力距离频谱,并具有用户定义的“停留时间”。使用高数据捕获速率,在停留时间内进行了许多电气测量,导致每个像素的电气和机械光谱。典型的力距离光谱以40 Hz的坡道速率测量,每个像素为100 ms停留时间,在单个实验中提供了充分的表征,该实验在商业AFM中闻所未闻。同时渲染地形,机械和多维电气信息不再是史诗般的实验。现在,可以作为常规的AFM测量来实现此类数据。DataCube模式在每次扫描中都具有复合数据的纳米长度尺度上的多维数据立方体。该功能可实现一系列强大的新模式。

Datacube-Tuna(DCUBE-TUNA)

导电AFM结果are influenced by the applied sample voltage, depicting important performance transitions of a material or device. DCUBE-TUNA enables simultaneous acquisition of nanomechanical information and electrical conductivity at a multitude of sample voltages in a single measurement, building a dense data cube of sample information. This is the only mode providing a complete picture of the sample conductivity, with details such as conductivity type (Ohmic, non-Ohmic, Schottky, etc.), and barrier heights.

当前图像在Maghemite(γ -FE2O3)上收集的同时,将样品电压从每个像素中的-2V升至 +2V。不同的谷物具有不同的传导机制,通过将数据视为“切片”来突出显示电压。

Datacube-SCM(DCUBE-SCM)

扫描电容显微镜(SCM)provides a method for direct measurement of active carrier concentration with nanometer-scale accuracy. DCUBE-SCM enables simultaneous acquisition of nanomechanical and carrier information at a multitude of sample voltages in a single measurement. The technique provides a unique solution to observe dC/dV amplitude and dC/dV phase value changes and junction position shifts. Through the resulting data cubes, a researcher can observe additional information on oxide thickness, oxide charges, threshold voltages, contamination from mobile ions, and interface trap density.

切片通过直流/DV幅度,同时将电压从-2V升至2V,显示PNP连接曲线随电压变化。数据由CEA,CEA,莱蒂,法国的N. Chevalier和D. Mariolle提供。
DC/DV振幅图像在SRAM内存中的两个相邻PNP晶体管上收集的图像,同时将样品电压从-2V升至 +2V。依赖电压的PN连接位置对应于预期行为。某些掺杂剂缺陷仅在特定电压下可见。扫描尺寸3x3 UM。数据由N. Chevalier和D. Mariolle,Uni提供。Grenoble Alpes,CEA,Leti,法国。

Datacube-PFM(DCUBE-PFM)

压电响应(压电)显微镜(PFM)是一种以纳米尺度对样品的反向压电效应映射的技术。DCUBE-PFM可以同时获得数据立方体中的纳米力学信息和PFM振幅/相光谱,这揭示了单个数据集中每个域的开关电压。此外,DCUBE-PFM克服了与常规的数据分析的伪像,样本损坏和数据分析的复杂性联系模式approaches.

DCUBE-PFM高度和PFM图像(左)和光谱图(右)(右)沿1.2 µm的长线横穿BFO铁电极样品中的多个域。这些图显示了从-6V到0V的坡道期间的PFM振幅和PFM相位与偏置。可以为每个域提取开关电压。

Datacube-CR-PFM(DCUBE-CR-PFM)

DCUBE PIEZORESPONSE(PIEZOFORCE)显微镜与接触共振相结合提供了DCUBE-PFM的好处,并具有在每个像素上提供频率坡道的额外好处,从而提供了完整的频谱和接触resonance的峰值灵敏度。

在LITAO3样品上收集的DCUBE-CR-PFM数据,显示地形,接触共振时的PFM振幅(CR),PFM相和Cr峰的数量(当材料未显示压电电响应时为零)。显示了几个像素的PFM振幅和相位与频谱以及相应的力光谱。

Datacube-SSRM(DCUBE-SSRM)

扫描扩散电阻显微镜(SSRM)is used to map the variation in majority carrier concentration in doped semiconductors. DCUBE-SSRM enables simultaneous acquisition of nanomechanical information and 3D carrier density mapping in a single measurement. The resulting data cubes provide complete characterization including nanoscale topography, mechanical information and log-resistance spectroscopy. In addition, I-V measurements reveal conductivity whether Ohmic, non-Ohmic, Schottky, or other.

The image series here shows how DataCube SSRM on a Dimension Icon XR helps map out the component distribution and uncover drastic particle to particle variation. Here the modulus map available in DataCube mode clearly distinguishes the hard metal oxide particles from the surrounding soft binder, while a concurrently acquired conductivity map reveals the uneven distribution of carbon black. A particle near the top edge of the image is seen not to be covered by carbon black and a series of conductivity images extracted from the same data cube identifies this particle as dead i.e. inactive over the entire range of operating voltages.

DataCube-SMIM(DCUBE-SMIM)

在用户定义的样品电压下,扫描微波显微镜成像(SMIM)提供了阻抗的电容(C)和电阻(R)部分的地图以及DC/DV和DR/DV数据。使用DCUBE -SMIM,可以在单个扫描中以各种样品电压获取相同的属性 - 并立即获得“全图”。该光谱还揭示了其他信息,例如传导类型(欧姆,非荷兰,肖特基等),氧化物厚度,氧化物电荷,移动离子的污染和界面陷阱密度。

Force vs. time, and Capacitance (sMIM-C) vs. time plots in 2 pixels with opposite dopant type. The typical S-shaped C-V curves, acquired during a 100ms dwell time, are visible for both n-type and p-type. The images show ‘slices’ at 3 different sample voltages in the DataCube on a Si sample with dual staircase profile (See for a sample description: DOI: 10.1016/j.microrel.2014.07.024, Infineon Munich). At different voltages, the contrast & sensitivity in n-type and p-type regions varies.