PCRAM Thickness and Composition
PCRAM Thickness and Composition
Bruker's x-ray systems provide solutions for both in-line process monitoring and research and development materials characterization. Whether the complex, multi-element structures of emerging memories or more traditional PCRAM strucutures, our systems provide the critical information needed to precisely determine and monitor crystalline phases.
In-line Composition Monitoring
Ideal for the monitoring phase change memory and other emerging memories that are stacks of complex, multi-element structures,Bruker's Sirius-RFtool combines the power of X-ray reflectivity (XRR) thickness measurements of individual layers in a stack with multi-source µXRF for the determination of composition & thickness on pad and cell area.
例如,系统是用来测量composition and thickness of the memory element (GeSbTe - GST) and Ovonic Threshold Switch (OTS, GeAsSe), both are critical parameters.
The Sirius-RF µXRF allows in-line composition monitoring on metrology pads or device areas. Fast convergent beam XRR allows thickness measurement at 1-2 seconds per point.
In-Situ Study of Phase Transitions in a GST Thin Film
Understanding the phase transition behavior in thin film materials is of crucial importance for the development of PCRAM devices.
Non-ambient X-ray Diffractionallows precise determination of the crystalline phases and lattice parameters as a function of the temperature.
In addition, X-ray reflectometry is the most accurate non-destructive method for the thickness determination of amorphous GST films.
Bruker‘s laboratory diffraction solutions,D8 DISCOVERandD8 ADVANCE, are powerful XRD tools to support research and development of PCRAM devices.
